Dynamic behavior of resistive random access memories (RRAMS) based on plastic semiconductor (RRAMS) based on plastic semiconductor
Resistive Random Access Memories based on metal-oxide polymer diodes are characterized. The dynamic behavior is studied by recording current-voltage characteristics with varying voltage ramp speed. It is demonstrated that these organic memory devices have an internal capacitive double-layer structur...
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| Other Authors: | , , |
| Format: | article |
| Language: | eng |
| Published: |
2014
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| Subjects: | |
| Online Access: | http://hdl.handle.net/10400.1/3314 |
| Country: | Portugal |
| Oai: | oai:sapientia.ualg.pt:10400.1/3314 |
| Summary: | Resistive Random Access Memories based on metal-oxide polymer diodes are characterized. The dynamic behavior is studied by recording current-voltage characteristics with varying voltage ramp speed. It is demonstrated that these organic memory devices have an internal capacitive double-layer structure, which inhibits the switching at high ramp rates (1000 V/s). This behavior is modeled and explained in terms of an equivalent circuit. |
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