Electronic conduction processes in VCM-type metal-oxide ReRAM cells

New applications, such as neuromorphic computing, and the limitations of current semiconductor technologies demand a revolution in electronic devices. As one of the key enablers of a new electronics paradigm, redox-based resistive switching random access memory (ReRAM) has been the focus of much res...

Full description

Bibliographic Details
Main Author: Rosário, Carlos Miguel Marques do (author)
Format: doctoralThesis
Language:eng
Published: 2021
Subjects:
Electrical transport
Resistive switching
ReRAM
Conductive filaments
TaOx
Disordered metal
Online Access:http://hdl.handle.net/10773/30371
Country:Portugal
Oai:oai:ria.ua.pt:10773/30371

Internet

http://hdl.handle.net/10773/30371

Similar Items