Resistive switching in nanostructured thin films

Planar capacitor structures based on granular films composed of nanometric ferromagnetic grains embedded in an insulating Al2O3 matrix can switch between a high-conductance and a low-conductance state. The switching properties are induced by a forming process. The ON/OFF resistance ratio is as high...

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Detalhes bibliográficos
Autor principal: Silva, Hugo G. (author)
Outros Autores: Gomes, Henrique L. (author), Pogorelov, Y. G. (author), Stallinga, Peter (author), De Leeuw, Dago M. (author), Araújo, J. P. (author), Sousa, J. B. (author), Meskers, S. C. J. (author), Kakazei, G. N. (author), Cardoso, S. (author), Freitas, P. P. (author)
Formato: article
Idioma:eng
Publicado em: 2014
Texto completo:http://hdl.handle.net/10400.1/3319
País:Portugal
Oai:oai:sapientia.ualg.pt:10400.1/3319

Texto Completo

http://hdl.handle.net/10400.1/3319

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