Reductive nanometric patterning of graphene oxide paper using electron beam lithography

Electron beam lithography (EBL) was used for preparing nanostructured reduced patterns on the GO paper surface, while preserving its mechanical resistance and flexibility. Different EBL parameters, like dose and time of exposure for patterning were tested. SEM analysis showed the consequent increase...

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Detalhes bibliográficos
Autor principal: Gonçalves, Gil (author)
Outros Autores: Borme, Jérôme (author), Bdkin, Igor (author), González-Mayorga, Ankor (author), Irurueta, Gonzalo (author), Nogueira, Helena I.S. (author), Serrano, María C. (author), Alpuim, P. (author), Marques, Paula A.A.P. (author)
Formato: article
Idioma:eng
Publicado em: 2018
Assuntos:
graphene oxide
graphene oxide paper
electron beam lithography
conductivity
nanoidentation
cytocompatibility
Nanoindentation
Reduction patterning
Engenharia e Tecnologia::Engenharia dos Materiais
Engenharia e Tecnologia::Nanotecnologia
Science & Technology
Texto completo:http://hdl.handle.net/1822/48558
País:Portugal
Oai:oai:repositorium.sdum.uminho.pt:1822/48558

Texto Completo

http://hdl.handle.net/1822/48558

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