Adsorption of H₂, O₂, H₂O, OH and H on monolayer MoS₂
Hydrogen and hydrogen-containing gases are commonly used as reductants in chemical vapor deposition (CVD) growth of MoS<sub>2</sub>. Here, we consider the defects resulting from the presence of hydrogen during growth and the resulting electronically active defects. In particular, we find...
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| Outros Autores: | , , , |
| Formato: | article |
| Idioma: | eng |
| Publicado em: |
2018
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| Assuntos: | |
| Texto completo: | http://hdl.handle.net/1822/48427 |
| País: | Portugal |
| Oai: | oai:repositorium.sdum.uminho.pt:1822/48427 |