The effects of ZnO coating on the photoluminescence properties of porous silicon for the advanced optoelectronic devices

In the present work we investigate, the role of zinc oxide (ZnO) thin films passivating layer deposited by rf magnetron sputtering at room temperature on low (18%) and high (80%) porosity porous silicon (PS). The micro-Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR) and atomic for...

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Bibliographic Details
Main Author: Prabakaran, R. (author)
Other Authors: Peres, M. (author), Monteiro, T. (author), Fortunato, E. (author), Martins, R. (author), Ferreira, I. (author)
Format: article
Language:eng
Published: 2008
Subjects:
Online Access:http://hdl.handle.net/10773/6142
Country:Portugal
Oai:oai:ria.ua.pt:10773/6142