The effects of ZnO coating on the photoluminescence properties of porous silicon for the advanced optoelectronic devices
In the present work we investigate, the role of zinc oxide (ZnO) thin films passivating layer deposited by rf magnetron sputtering at room temperature on low (18%) and high (80%) porosity porous silicon (PS). The micro-Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR) and atomic for...
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| Outros Autores: | , , , , |
| Formato: | article |
| Idioma: | eng |
| Publicado em: |
2008
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| Assuntos: | |
| Texto completo: | http://hdl.handle.net/10773/6142 |
| País: | Portugal |
| Oai: | oai:ria.ua.pt:10773/6142 |