The effects of ZnO coating on the photoluminescence properties of porous silicon for the advanced optoelectronic devices

In the present work we investigate, the role of zinc oxide (ZnO) thin films passivating layer deposited by rf magnetron sputtering at room temperature on low (18%) and high (80%) porosity porous silicon (PS). The micro-Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR) and atomic for...

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Bibliographic Details
Main Author: Prabakaran, R. (author)
Other Authors: Peres, M. (author), Monteiro, T. (author), Fortunato, E. (author), Martins, R. (author), Ferreira, I. (author)
Format: article
Language:eng
Published: 2008
Subjects:
Raman scattering
Nanocrystals
Luminescence
Online Access:http://hdl.handle.net/10773/6142
Country:Portugal
Oai:oai:ria.ua.pt:10773/6142
Description
Summary:In the present work we investigate, the role of zinc oxide (ZnO) thin films passivating layer deposited by rf magnetron sputtering at room temperature on low (18%) and high (80%) porosity porous silicon (PS). The micro-Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR) and atomic force microscopy (AFM) analysis have been carried out to understand the effect of ZnO films coating on PS. A systematic investigation from Raman spectroscopy suggests the formation of a good quality ZnO wurtzite structure on PS. The photoluminescence (PL) measurements on PS and ZnO coated PS shows a red, blue and UV emission bands at around ∼1.8, ∼2.78 and ∼3.2 eV. An enhancement of all PL emission bands have been achieved after ZnO films deposition on high porosity PS.

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