Thickness, humidity, and polarization dependent ferroelectric switching and conductivity in Mg doped lithium niobate

Mg doped lithium niobate (Mg:LN) exhibits several advantages over undoped LN such as resistance to photorefraction, lower coercive fields, and p-type conductivity that is particularly pronounced at domain walls and opens up a range of applications, e.g., in domain wall electronics. Engineering of pr...

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Detalhes bibliográficos
Autor principal: Neumayer, Sabine M. (author)
Outros Autores: Strelcov, Evgheni (author), Manzo, Michele (author), Gallo, Katia (author), Kravchenko, Ivan I. (author), Kholkin, Andrei L. (author), Kalinin, Sergei V. (author), Rodriguez, Brian J. (author)
Formato: article
Idioma:eng
Publicado em: 2017
Assuntos:
DOMAIN INVERSION
FORCE MICROSCOPY
LINBO3
CRYSTALS
RESISTANCE
SURFACES
REVERSAL
DIODE
Texto completo:http://hdl.handle.net/10773/20502
País:Portugal
Oai:oai:ria.ua.pt:10773/20502

Texto Completo

http://hdl.handle.net/10773/20502

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