Up conversion from visible to ultraviolet in bulk ZnO implanted with Tm ions

We report on the up-converted ultraviolet near-band edge emission of bulk ZnO generated by visible and ultraviolet photons with energies below the band gap. This up-converted photoluminescence was observed in samples intentionally doped with Tm ions, suggesting that the energy levels introduced by t...

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Detalhes bibliográficos
Autor principal: Monteiro, T. (author)
Outros Autores: Neves, A. J. (author), Soares, M. J. (author), Carmo, M. C. (author), Peres, M. (author), Alves, E. (author), Rita, E. (author)
Formato: article
Idioma:eng
Publicado em: 2012
Assuntos:
Zinc compounds
Thulium
II-VI semiconductors
iion implantation
Optical frequency conversion
Ultraviolet spectra
Visible spectra
Photoluminescence
Energy gap
Texto completo:http://hdl.handle.net/10773/5630
País:Portugal
Oai:oai:ria.ua.pt:10773/5630
Descrição
Resumo:We report on the up-converted ultraviolet near-band edge emission of bulk ZnO generated by visible and ultraviolet photons with energies below the band gap. This up-converted photoluminescence was observed in samples intentionally doped with Tm ions, suggesting that the energy levels introduced by the rare earth ion in the ZnO band gap are responsible for this process.

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