Up conversion from visible to ultraviolet in bulk ZnO implanted with Tm ions

We report on the up-converted ultraviolet near-band edge emission of bulk ZnO generated by visible and ultraviolet photons with energies below the band gap. This up-converted photoluminescence was observed in samples intentionally doped with Tm ions, suggesting that the energy levels introduced by t...

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Bibliographic Details
Main Author: Monteiro, T. (author)
Other Authors: Neves, A. J. (author), Soares, M. J. (author), Carmo, M. C. (author), Peres, M. (author), Alves, E. (author), Rita, E. (author)
Format: article
Language:eng
Published: 2012
Subjects:
Zinc compounds
Thulium
II-VI semiconductors
iion implantation
Optical frequency conversion
Ultraviolet spectra
Visible spectra
Photoluminescence
Energy gap
Online Access:http://hdl.handle.net/10773/5630
Country:Portugal
Oai:oai:ria.ua.pt:10773/5630

Internet

http://hdl.handle.net/10773/5630

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