Photo-induced instability of nanocrystalline silicon TFTs

We examine the instability behavior of nanocrystalline silicon (nc-Si) thin-film transistors (TFTs) in the presence of electrical and optical stress. The change in threshold voltage and sub-threshold slope is more significant under combined bias-and-light stress when compared to bias stress alone. T...

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Detalhes bibliográficos
Autor principal: Bauza, Marius (author)
Outros Autores: Ahnood, Arman (author), Li, Flora (author), Vygranenko, Yuri (author), Esmaeili-Rad, Mohammad R. (author), Chaji, G. (author), Sazonov, Andrei (author), Robertson, John (author), Milne, William (author), Nathan, Arokia (author)
Formato: article
Idioma:eng
Publicado em: 2011
Assuntos:
Nanocrystalline silicon (nc-Si:H)
Photo-induced instability
Thin-film transistors (TFTs)
Texto completo:http://hdl.handle.net/10400.21/512
País:Portugal
Oai:oai:repositorio.ipl.pt:10400.21/512

Texto Completo

http://hdl.handle.net/10400.21/512

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