Resistive switching of silicon-silver thin film devices in flexible substrates

Novel applications for memory devices demand nanoscale flexible structures. In particular, resistive switching (RS) devices are promising candidates for wearable and implantable technologies. Here, the Pt/Si/Ag/TiW metal-insulator-metal structure was fabricated and characterized on top of flexible s...

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Bibliographic Details
Main Author: Dias, C. (author)
Other Authors: Leitao, D. C. (author), Freire, C. S. R. (author), H, Gomes (author), Cardoso, S. (author), Ventura, J. (author)
Format: article
Language:eng
Published: 2021
Subjects:
Resistive switching
Memristors
Flexible electronics
Cellulose-based electronics
Metallic filaments
Online Access:http://hdl.handle.net/10400.1/16540
Country:Portugal
Oai:oai:sapientia.ualg.pt:10400.1/16540

Internet

http://hdl.handle.net/10400.1/16540

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