Electrostatic mechanism of strong enhancement of light emitted by semiconductor quantum wells

Currently, it is understood that the carrier recombination rate in semiconductors can be modified by metals due to pure electrodynamic interactions through surface plasmons. We propose here an electrostatic mechanism for carrier-metallic nanoparticle interaction comparable in effect to plasmonic int...

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Bibliographic Details
Main Author: Llopis, A. (author)
Other Authors: Lin, J. (author), Pereira, S. M. S. (author), Trinidade, T. (author), Martins, M. A. (author), Watson, I. M. (author), Krokhin, A. A. (author), Neogi, A. (author)
Format: article
Language:eng
Published: 2017
Subjects:
EMISSION
SURFACE
PHOTOLUMINESCENCE
NANOCAVITIES
PLASMONICS
Online Access:http://hdl.handle.net/10773/20654
Country:Portugal
Oai:oai:ria.ua.pt:10773/20654

Internet

http://hdl.handle.net/10773/20654

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