Electrostatic mechanism of strong enhancement of light emitted by semiconductor quantum wells
Currently, it is understood that the carrier recombination rate in semiconductors can be modified by metals due to pure electrodynamic interactions through surface plasmons. We propose here an electrostatic mechanism for carrier-metallic nanoparticle interaction comparable in effect to plasmonic int...
| Autor principal: | |
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| Outros Autores: | , , , , , , |
| Formato: | article |
| Idioma: | eng |
| Publicado em: |
2017
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| Assuntos: | |
| Texto completo: | http://hdl.handle.net/10773/20654 |
| País: | Portugal |
| Oai: | oai:ria.ua.pt:10773/20654 |