Steady-state and time-resolved luminescence in InGaN layers
InGaN layers are used as active layers of high brightness in nitride-based LEDs and lasers. Despite the progress in device development many of the fundamental optical properties are not completely understood. InGaN samples with different In content are studied by steady-state and time-resolved photo...
| Main Author: | |
|---|---|
| Other Authors: | , , , , , |
| Format: | article |
| Language: | eng |
| Published: |
1000
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/10773/6311 |
| Country: | Portugal |
| Oai: | oai:ria.ua.pt:10773/6311 |