Steady-state and time-resolved luminescence in InGaN layers
InGaN layers are used as active layers of high brightness in nitride-based LEDs and lasers. Despite the progress in device development many of the fundamental optical properties are not completely understood. InGaN samples with different In content are studied by steady-state and time-resolved photo...
| Autor principal: | |
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| Outros Autores: | , , , , , |
| Formato: | article |
| Idioma: | eng |
| Publicado em: |
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| Assuntos: | |
| Texto completo: | http://hdl.handle.net/10773/6311 |
| País: | Portugal |
| Oai: | oai:ria.ua.pt:10773/6311 |