Modeling buffer layer IGBTs with an efficient parameter extraction method
A Finite Element physics-based punch-through IGBT model is presented, as well as its porting into standard circuit simulator SPICE. Developed model is based on solving the Ambipolar Diffusion Equation (ADE) trough a variational formulation, resulting in a system of ODEs, from which charge carrier di...
Autor principal: | |
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Outros Autores: | , |
Formato: | book |
Idioma: | eng |
Publicado em: |
2005
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Assuntos: | |
Texto completo: | https://hdl.handle.net/10216/275 |
País: | Portugal |
Oai: | oai:repositorio-aberto.up.pt:10216/275 |