A new approach for physical-based modelling of bipolar power semiconductor devices

This paper presents a hybrid approach for accurate modelling and simulation of power bipolar semiconductor devices. Model's core is a numerical module that solves ambipolar diffusion equation (ADE) trough a variational formulation followed by an approximate solution with a finite element approa...

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Bibliographic Details
Main Author: R. Chibante (author)
Other Authors: A. Araújo (author), A. Carvalho (author)
Format: article
Language:eng
Published: 2008
Subjects:
Engenharia electrotécnica, Engenharia electrotécnica, electrónica e informática
Electrical engineering, Electrical engineering, Electronic engineering, Information engineering
Online Access:https://hdl.handle.net/10216/101618
Country:Portugal
Oai:oai:repositorio-aberto.up.pt:10216/101618

Internet

https://hdl.handle.net/10216/101618

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