A new approach for physical-based modelling of bipolar power semiconductor devices
This paper presents a hybrid approach for accurate modelling and simulation of power bipolar semiconductor devices. Model's core is a numerical module that solves ambipolar diffusion equation (ADE) trough a variational formulation followed by an approximate solution with a finite element approa...
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| Outros Autores: | , |
| Formato: | article |
| Idioma: | eng |
| Publicado em: |
2008
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| Assuntos: | |
| Texto completo: | https://hdl.handle.net/10216/101618 |
| País: | Portugal |
| Oai: | oai:repositorio-aberto.up.pt:10216/101618 |