Cloaking resonant scatterers and tuning electron flow in graphene
We consider resonant scatterers with large scattering cross-sections in graphene that are produced by a gated disk or a vacancy, and show that a gated ring can be engineered to produce an efficient electron cloak. We also demonstrate that this same scheme can be applied to tune the direction of elec...
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| Other Authors: | , , , |
| Format: | article |
| Language: | eng |
| Published: |
2015
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| Subjects: | |
| Online Access: | http://hdl.handle.net/1822/35017 |
| Country: | Portugal |
| Oai: | oai:repositorium.sdum.uminho.pt:1822/35017 |