Photoluminescence between 3.36 eV and 3.41 eV from GaN epitaxial layers

In this study, an attempt was made to analyze the luminescence between 3.36 eV and 3.41 eV of nid hexagonal GaN samples grown on sapphire. Sample dependent emission lines with no donor-accetor pair (DAP) behavior were found. Based on the data, different kinds of recombination processes in the same s...

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Detalhes bibliográficos
Autor principal: Seitz, R. (author)
Outros Autores: Gaspar, C. (author), Monteiro, T. (author), Pereira, E. (author), Poisson, M.A. (author), Beaumont, B. (author)
Formato: conferenceObject
Idioma:eng
Publicado em: 2012
Assuntos:
Electron emission
Electron energy levels
Gas lasers
Metallorganic chemical vapor deposition
Monochromators
Photoluminescence
Photomultipliers
Sapphire
Substrates
Texto completo:http://hdl.handle.net/10773/7086
País:Portugal
Oai:oai:ria.ua.pt:10773/7086
Descrição
Resumo:In this study, an attempt was made to analyze the luminescence between 3.36 eV and 3.41 eV of nid hexagonal GaN samples grown on sapphire. Sample dependent emission lines with no donor-accetor pair (DAP) behavior were found. Based on the data, different kinds of recombination processes in the same spectral region were identified.

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