Photoluminescence between 3.36 eV and 3.41 eV from GaN epitaxial layers

In this study, an attempt was made to analyze the luminescence between 3.36 eV and 3.41 eV of nid hexagonal GaN samples grown on sapphire. Sample dependent emission lines with no donor-accetor pair (DAP) behavior were found. Based on the data, different kinds of recombination processes in the same s...

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Bibliographic Details
Main Author: Seitz, R. (author)
Other Authors: Gaspar, C. (author), Monteiro, T. (author), Pereira, E. (author), Poisson, M.A. (author), Beaumont, B. (author)
Format: conferenceObject
Language:eng
Published: 2012
Subjects:
Electron emission
Electron energy levels
Gas lasers
Metallorganic chemical vapor deposition
Monochromators
Photoluminescence
Photomultipliers
Sapphire
Substrates
Online Access:http://hdl.handle.net/10773/7086
Country:Portugal
Oai:oai:ria.ua.pt:10773/7086
Description
Summary:In this study, an attempt was made to analyze the luminescence between 3.36 eV and 3.41 eV of nid hexagonal GaN samples grown on sapphire. Sample dependent emission lines with no donor-accetor pair (DAP) behavior were found. Based on the data, different kinds of recombination processes in the same spectral region were identified.

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