Optical conductivity of ABA stacked graphene trilayer : mid-IR resonance due to band nesting

The band structure and the optical conductivity of an ABA (Bernal-type) stacked graphene trilayer are calculated. It is shown that, under appropriate doping, a strong resonant peak develops in the optical conductivity, located at the frequency corresponding to approximately 1.4 times the interlayer...

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Bibliographic Details
Main Author: Rashidian, Zeinab (author)
Other Authors: Bludov, Yuliy V. (author), Ribeiro, R. M. (author), Peres, N. M. R. (author), Vasilevskiy, Mikhail (author)
Format: article
Language:eng
Published: 2014
Subjects:
graphene
Bernal stacking
optical absorption
Science & Technology
Online Access:http://hdl.handle.net/1822/32087
Country:Portugal
Oai:oai:repositorium.sdum.uminho.pt:1822/32087
Description
Summary:The band structure and the optical conductivity of an ABA (Bernal-type) stacked graphene trilayer are calculated. It is shown that, under appropriate doping, a strong resonant peak develops in the optical conductivity, located at the frequency corresponding to approximately 1.4 times the interlayer hopping energy and caused by the 'nesting' of two nearly parabolic bands in the electronic spectrum. The intensity of this resonant absorption can be controlled by adjusting the gate voltage. The effect is robust with respect to increasing temperature.

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