Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN

Continued development of GaN-based light emitting diodes is being hampered by constraints imposed by current non-native substrates. ZnO is a promising alternative substrate but it decomposes under the conditions used in conventional GaN metal organic vapor phase epitaxy MOVPE . In this work, GaN was...

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Bibliographic Details
Main Author: Rogers, D.J. (author)
Other Authors: Hosseini Teherani, F. (author), Ougazzaden, A. (author), Gautier, S. (author), Divay, L. (author), Lusson, A. (author), Durand, O. (author), Wyczisk, F. (author), Garry, G. (author), Monteiro, T. (author), Correira, M.R. (author), Peres, M. (author), Neves, A. (author), McGrouther, D. (author), Chapman, J.N. (author), Razeghi, M. (author)
Format: article
Language:eng
Published: 2007
Subjects:
Aluminium compounds
Gallium compounds
III-V semiconductors
Nitrogen
Semiconductor thin films
Sputter etching
Vapour phase epitaxial growth
Wide band gap semiconductors
Zinc compounds
Online Access:http://hdl.handle.net/10773/6107
Country:Portugal
Oai:oai:ria.ua.pt:10773/6107

Internet

http://hdl.handle.net/10773/6107

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