Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN

Continued development of GaN-based light emitting diodes is being hampered by constraints imposed by current non-native substrates. ZnO is a promising alternative substrate but it decomposes under the conditions used in conventional GaN metal organic vapor phase epitaxy MOVPE . In this work, GaN was...

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Detalhes bibliográficos
Autor principal: Rogers, D.J. (author)
Outros Autores: Hosseini Teherani, F. (author), Ougazzaden, A. (author), Gautier, S. (author), Divay, L. (author), Lusson, A. (author), Durand, O. (author), Wyczisk, F. (author), Garry, G. (author), Monteiro, T. (author), Correira, M.R. (author), Peres, M. (author), Neves, A. (author), McGrouther, D. (author), Chapman, J.N. (author), Razeghi, M. (author)
Formato: article
Idioma:eng
Publicado em: 2007
Assuntos:
Aluminium compounds
Gallium compounds
III-V semiconductors
Nitrogen
Semiconductor thin films
Sputter etching
Vapour phase epitaxial growth
Wide band gap semiconductors
Zinc compounds
Texto completo:http://hdl.handle.net/10773/6107
País:Portugal
Oai:oai:ria.ua.pt:10773/6107

Texto Completo

http://hdl.handle.net/10773/6107

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