Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN

Continued development of GaN-based light emitting diodes is being hampered by constraints imposed by current non-native substrates. ZnO is a promising alternative substrate but it decomposes under the conditions used in conventional GaN metal organic vapor phase epitaxy MOVPE . In this work, GaN was...

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Bibliographic Details
Main Author: Rogers, D.J. (author)
Other Authors: Hosseini Teherani, F. (author), Ougazzaden, A. (author), Gautier, S. (author), Divay, L. (author), Lusson, A. (author), Durand, O. (author), Wyczisk, F. (author), Garry, G. (author), Monteiro, T. (author), Correira, M.R. (author), Peres, M. (author), Neves, A. (author), McGrouther, D. (author), Chapman, J.N. (author), Razeghi, M. (author)
Format: article
Language:eng
Published: 2007
Subjects:
Aluminium compounds
Gallium compounds
III-V semiconductors
Nitrogen
Semiconductor thin films
Sputter etching
Vapour phase epitaxial growth
Wide band gap semiconductors
Zinc compounds
Online Access:http://hdl.handle.net/10773/6107
Country:Portugal
Oai:oai:ria.ua.pt:10773/6107
Description
Summary:Continued development of GaN-based light emitting diodes is being hampered by constraints imposed by current non-native substrates. ZnO is a promising alternative substrate but it decomposes under the conditions used in conventional GaN metal organic vapor phase epitaxy MOVPE . In this work, GaN was grown on ZnO/c-Al2O3 using low temperature/pressure MOVPE with N2 as a carrier and dimethylhydrazine as a N source. Characterization confirmed the epitaxial growth of GaN. The GaN was lifted-off the c-Al2O3 by chemically etching away the ZnO underlayer. This approach opens up the way for bonding of the GaN onto a support of choice. © 2007 American Institute of Physics

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