A new physics based SPICE sub-circuit model for insulated gate bipolar transistors (IGBTs)
The paper describes SPICE simulator implementation of a new, physics based, Finite Element Method (FEM) model for semiconductor simulation. The method is based on unidimensional approach that associates each zone of the semiconductor to a sub-circuit capable of implementation, in any general circuit...
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| Outros Autores: | , |
| Formato: | book |
| Idioma: | eng |
| Publicado em: |
2003
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| Assuntos: | |
| Texto completo: | https://hdl.handle.net/10216/531 |
| País: | Portugal |
| Oai: | oai:repositorio-aberto.up.pt:10216/531 |