Light-emitting thin-film field-effect transistors
A model for thin-film field-effect transistors in which the active layer is treated as purely two-dimensional is applied to ambipolar devices that have shown to be light emitting. This results in an adequate description of the electrical characteristics.
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| Formato: | article |
| Idioma: | eng |
| Publicado em: |
2015
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| Texto completo: | http://hdl.handle.net/10400.1/6623 |
| País: | Portugal |
| Oai: | oai:sapientia.ualg.pt:10400.1/6623 |