Study of calcium implanted GaN

Single crystalline GaN samples were implanted with several fluences of Ca ions at room temperature (RT) and 550 °C. The implantation at high temperature reduces significantly the damage. The measured minimum yield along the 〈0 0 0 1〉 axis in the implanted region increases from 15% to 40% when the su...

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Detalhes bibliográficos
Autor principal: Alves, E. (author)
Outros Autores: Liu, C. (author), Lopes, E.B. (author), Da Silva, M.F. (author), Soares, J.C. (author), Boemare, C. (author), Soares, M.J. (author), Monteiro, T. (author)
Formato: article
Idioma:eng
Publicado em: 1000
Assuntos:
GaN
Lattice location
RBS/channeling
Texto completo:http://hdl.handle.net/10773/6210
País:Portugal
Oai:oai:ria.ua.pt:10773/6210

Texto Completo

http://hdl.handle.net/10773/6210

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