High temperature annealing of rare earth implanted GaN films: Structural and optical properties

GaN epilayers grown by MOCVD were implanted with Tm and Eu under different implantation conditions, in order to optimize the implantation parameters of fluence, implantation temperature and energy. Rutherford backscattering spectrometry in the channelling mode (RBS/C), scanning electron microscopy (...

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Detalhes bibliográficos
Autor principal: Lorenz, K. (author)
Outros Autores: Wahl, U. (author), Alves, E. (author), Nogales, E. (author), Dalmasso, S. (author), Martin, R.W. (author), O'Donnell, K.P. (author), Wojdak, M. (author), Braud, A. (author), Monteiro, T. (author), Wojtowicz, T. (author), Ruterana, P. (author), Ruffenach, S. (author), Briot, O. (author)
Formato: article
Idioma:eng
Publicado em: 1000
Assuntos:
Annealing
Gallium nitride
High temperature effects
Optical properties
Rutherford backscattering spectroscopy
Texto completo:http://hdl.handle.net/10773/6500
País:Portugal
Oai:oai:ria.ua.pt:10773/6500

Texto Completo

http://hdl.handle.net/10773/6500

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