High temperature annealing of rare earth implanted GaN films: Structural and optical properties

GaN epilayers grown by MOCVD were implanted with Tm and Eu under different implantation conditions, in order to optimize the implantation parameters of fluence, implantation temperature and energy. Rutherford backscattering spectrometry in the channelling mode (RBS/C), scanning electron microscopy (...

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Bibliographic Details
Main Author: Lorenz, K. (author)
Other Authors: Wahl, U. (author), Alves, E. (author), Nogales, E. (author), Dalmasso, S. (author), Martin, R.W. (author), O'Donnell, K.P. (author), Wojdak, M. (author), Braud, A. (author), Monteiro, T. (author), Wojtowicz, T. (author), Ruterana, P. (author), Ruffenach, S. (author), Briot, O. (author)
Format: article
Language:eng
Published: 1000
Subjects:
Annealing
Gallium nitride
High temperature effects
Optical properties
Rutherford backscattering spectroscopy
Online Access:http://hdl.handle.net/10773/6500
Country:Portugal
Oai:oai:ria.ua.pt:10773/6500

Internet

http://hdl.handle.net/10773/6500

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