Piezoresistor sensor fabrication by direct laser writing on hydrogenated amorphous silicon

In this paper we report on the 532 nm Nd:YAG laser-induced crystallization of 10 nm thick boron-doped hydrogenated amorphous silicon thin films deposited on flexible polyimide and on rigid oxidized silicon wafers by hot-wire chemical vapor deposition. The dark conductivity increased from ~10-7 -1cm...

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Detalhes bibliográficos
Autor principal: Alpuim, P. (author)
Outros Autores: Cerqueira, M. F. (author), Noh, J. (author), Gaspar, J. (author), Borme, J. (author)
Formato: article
Idioma:eng
Publicado em: 2014
Assuntos:
Laser crystallization
Nanocrystalline silicon
Flexible electronics
Direct laser write
chemical vapor deposition (CVD) (deposition)
laser annealing
Raman spectroscopy
Texto completo:http://hdl.handle.net/1822/27347
País:Portugal
Oai:oai:repositorium.sdum.uminho.pt:1822/27347

Texto Completo

http://hdl.handle.net/1822/27347

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