Electrical properties of thin-films wide-band gap semiconductor TiO(2) prepared by CVD
High dielectric constant TiO2 thin films are promising for gate insulator in 100-nm microelectronic technology. In this study rutile and anatase phase TiO2 thin films were prepared by Chemical Vapour Deposition (CVD) method. Bulk and surface chemical composition of thin films were characterized by h...
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| Formato: | article |
| Idioma: | eng |
| Publicado em: |
2014
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| Texto completo: | http://hdl.handle.net/10400.1/3317 |
| País: | Portugal |
| Oai: | oai:sapientia.ualg.pt:10400.1/3317 |
| Resumo: | High dielectric constant TiO2 thin films are promising for gate insulator in 100-nm microelectronic technology. In this study rutile and anatase phase TiO2 thin films were prepared by Chemical Vapour Deposition (CVD) method. Bulk and surface chemical composition of thin films were characterized by high-resolution Laser Ionization Mass Spectrometry (LIMS) and by X-ray Photoemission Spectroscopy (XPS). Crystal structure was studied by (XRD). Silicon based Metal-Insulator semiconductor (MIS) capacitors formed on the high-k dielectric TiO2 were fabricated and characterized using small signal impedance studies as function of frequency and current vs voltage measurements. As it was shown from I–V characteristics, the Shockley equation adequately describes the conductivity mechanism in low field region. By analysis of I–V characteristics it was also found that there is change in carrier conduction mechanism from Shockley regime to the nonlinear Frenkel–Poole mechanism. |
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