Electrical properties of thin-films wide-band gap semiconductor TiO(2) prepared by CVD
High dielectric constant TiO2 thin films are promising for gate insulator in 100-nm microelectronic technology. In this study rutile and anatase phase TiO2 thin films were prepared by Chemical Vapour Deposition (CVD) method. Bulk and surface chemical composition of thin films were characterized by h...
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| Formato: | article |
| Idioma: | eng |
| Publicado em: |
2014
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| Texto completo: | http://hdl.handle.net/10400.1/3317 |
| País: | Portugal |
| Oai: | oai:sapientia.ualg.pt:10400.1/3317 |