Photodiode with nanocrystalline Si/amorphous Si absorber bilayer
This letter reports a near-ultraviolet/visible/near-infrared n(+)-n-i-delta(i)-p photodiode with an absorber comprising a nanocrystalline silicon n layer and a hydrogenated amorphous silicon i layer. Device modeling reveals that the dominant source of reverse dark current is deep defect states in th...
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| Outros Autores: | , , |
| Formato: | article |
| Idioma: | eng |
| Publicado em: |
2013
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| Assuntos: | |
| Texto completo: | http://hdl.handle.net/10400.21/2228 |
| País: | Portugal |
| Oai: | oai:repositorio.ipl.pt:10400.21/2228 |