Resistance Switching Memory Devices based on Zinc Oxide Nanoparticles on Paper Substrates

This work reports the development of resistive random access memory (RRAM) on paper using printed Zinc Oxide (ZnO) nanoparticles (NPs) as active layer. RRAM is a novel technology having attracted increasing attention due to their high-speed operation, high-density storage, and low voltage. Most impo...

Full description

Bibliographic Details
Main Author: Franco, Miguel Alexandre Martins (author)
Format: masterThesis
Language:eng
Published: 2017
Subjects:
Zinc oxide
Ethyl cellulose
Paper electronics
Resistive random access memory
Printed electronics
Screen-printing
Domínio/Área Científica::Engenharia e Tecnologia::Engenharia dos Materiais
Online Access:http://hdl.handle.net/10362/21756
Country:Portugal
Oai:oai:run.unl.pt:10362/21756

Internet

http://hdl.handle.net/10362/21756

Similar Items