Comparison of electrostatic and localized plasmon induced light enhancement in hybrid InGaN/GaN quantum wells
The light enhancement phenomena in InGaN/GaN multi-quantum wells (MQWs) infiltrated with metal nanoparticles (NPs) are studied using resonant and off-resonant localized plasmon interactions. The emission and recombination characteristics of carriers in InGaN/GaN MQW structures with inverted hexagona...
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| Outros Autores: | , , , , |
| Formato: | article |
| Idioma: | eng |
| Publicado em: |
2017
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| Assuntos: | |
| Texto completo: | http://hdl.handle.net/10773/20973 |
| País: | Portugal |
| Oai: | oai:ria.ua.pt:10773/20973 |