Comparison of electrostatic and localized plasmon induced light enhancement in hybrid InGaN/GaN quantum wells

The light enhancement phenomena in InGaN/GaN multi-quantum wells (MQWs) infiltrated with metal nanoparticles (NPs) are studied using resonant and off-resonant localized plasmon interactions. The emission and recombination characteristics of carriers in InGaN/GaN MQW structures with inverted hexagona...

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Bibliographic Details
Main Author: Lin, Jie (author)
Other Authors: Llopis, Antonio (author), Krokhin, Arkadii (author), Pereira, Sergio (author), Watson, Ian M. (author), Neogi, Arup (author)
Format: article
Language:eng
Published: 2017
Subjects:
Online Access:http://hdl.handle.net/10773/20973
Country:Portugal
Oai:oai:ria.ua.pt:10773/20973