Characterization and modelling of long-term memory effects in GaN HEMTs
Gallium nitride (GaN) high electron mobility transistor (HEMT) technology has been revolutionizing the RF power amplifier (PA) market. Its potential, versus existing technologies, such as Silicon (Si) Laterally-Diffused MOS(LDMOS), is yet to be completely explored. However, the lack of good characte...
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| Formato: | masterThesis |
| Idioma: | eng |
| Publicado em: |
2017
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| Texto completo: | http://hdl.handle.net/10773/18456 |
| País: | Portugal |
| Oai: | oai:ria.ua.pt:10773/18456 |