Charge trapping properties and retention time in amorphous SiGe/SiO2 nanolayers

In this paper, we report on the electrical properties of metal–oxide–semiconductor (MOS) capacitors containing a well-confined 8 nm-thick SiGe amorphous layer (a-SiGe) embedded in a SiO2 matrix grown by RF magnetron sputtering at a low temperature (350 ºC). Capacitance–voltage measurements show that...

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Bibliographic Details
Main Author: Vieira, E. M. F. (author)
Other Authors: Diaz, Regis (author), Grisolia, Jeremie (author), Parisini, Andrea (author), Martín-Sánchez, J. (author), Levichev, S. (author), Rolo, Anabela G. (author), Chahboun, A. (author), Gomes, M. J. M. (author)
Format: article
Language:eng
Published: 2013
Subjects:
Electrical properties
RF magnetron sputtering
Capacitance–voltage measurements
Memory effect
Charge retention
Amorphous SiGe
Memory applications
Science & Technology
Online Access:http://hdl.handle.net/1822/23575
Country:Portugal
Oai:oai:repositorium.sdum.uminho.pt:1822/23575
Description
Summary:In this paper, we report on the electrical properties of metal–oxide–semiconductor (MOS) capacitors containing a well-confined 8 nm-thick SiGe amorphous layer (a-SiGe) embedded in a SiO2 matrix grown by RF magnetron sputtering at a low temperature (350 ºC). Capacitance–voltage measurements show that the introduction of the SiGe layer leads to a significant enhancement of the charge trapping capabilities, with the memory effect and charge retention time larger for hole carriers. The presented results demonstrate that amorphous floating-gate SiGe layers embedded in SiO2 may constitute a suitable alternative for memory applications.

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