Charge trapping properties and retention time in amorphous SiGe/SiO2 nanolayers

In this paper, we report on the electrical properties of metal–oxide–semiconductor (MOS) capacitors containing a well-confined 8 nm-thick SiGe amorphous layer (a-SiGe) embedded in a SiO2 matrix grown by RF magnetron sputtering at a low temperature (350 ºC). Capacitance–voltage measurements show that...

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Detalhes bibliográficos
Autor principal: Vieira, E. M. F. (author)
Outros Autores: Diaz, Regis (author), Grisolia, Jeremie (author), Parisini, Andrea (author), Martín-Sánchez, J. (author), Levichev, S. (author), Rolo, Anabela G. (author), Chahboun, A. (author), Gomes, M. J. M. (author)
Formato: article
Idioma:eng
Publicado em: 2013
Assuntos:
Electrical properties
RF magnetron sputtering
Capacitance–voltage measurements
Memory effect
Charge retention
Amorphous SiGe
Memory applications
Science & Technology
Texto completo:http://hdl.handle.net/1822/23575
País:Portugal
Oai:oai:repositorium.sdum.uminho.pt:1822/23575

Texto Completo

http://hdl.handle.net/1822/23575

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