Thin-film transistors based on p-type Cu2O thin films produced at room temperature

This work was funded by the Portuguese Science Foundation (FCT-MCTES) through projects PTDC/CTM/73943/2006, PTDC/EEA-ELC/64975/2006, ERC 2008 Advanced Grant (INVISIBLE Contract No. 228144) and IT R&D program of MKE (Contract No. 2006-S079-03, Smart window with transparent electronic devices) fro...

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Detalhes bibliográficos
Autor principal: Fortunato, Elvira Maria Correia (author)
Outros Autores: Figueiredo, Vitor (author), Barquinha, Pedro Miguel Cândido (author), Elamurugu, Elangovan (author), Barros, Raquel (author), Gonçalves, Gonçalo (author), Park, Sang Hee Ko (author), Martins, Rodrigo Ferrão de Paiva (author), Hwang, Chisun (author)
Formato: article
Idioma:eng
Publicado em: 2017
Assuntos:
Bottom gate
Electrical performance
Field-effect mobilities
On/off ratio
P-type
Polycrystalline structure
rf-Magnetron sputtering
Room temperature
Electrodeposition
Copper oxides
Cuprous oxide
Texto completo:http://hdl.handle.net/10362/24020
País:Portugal
Oai:oai:run.unl.pt:10362/24020

Texto Completo

http://hdl.handle.net/10362/24020

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