Strain relaxation in GaN films as a function of growth direction and buffer layer measured by Raman spectroscopy

We studied the residual strain in hexagonal GaN epitaxial layers grown exactly or slightly off the (0001) direction on sapphire substrates with either GaN or AlN buffer layers (BLs). The residual strain was determined by Raman spectroscopy. The results were compared with photoluminescence (PL) measu...

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Bibliographic Details
Main Author: Seitz, R. (author)
Other Authors: Monteiro, T. (author), Pereira, E. (author), Di Forte-Poisson, M. (author)
Format: article
Language:eng
Published: 1000
Subjects:
Crystal orientation
Metallorganic chemical vapor deposition
Photoluminescence
Raman spectroscopy
Online Access:http://hdl.handle.net/10773/6484
Country:Portugal
Oai:oai:ria.ua.pt:10773/6484

Internet

http://hdl.handle.net/10773/6484

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