| Summary: | This work aims to characterize Indium-Gallium-Zinc-Oxide nanoparticles (IGZOnp) as a resistive switching matrix in metal-insulator-metal (MIM) structures for memristor application. IGZOnp was produced by low cost solution-based process and deposited by spin-coating technique. Several top and bottom electrodes combinations, including IZO, Pt, Au, Ti, Ag were investigated to evaluate memory performance, yield and switching properties. The effect of ambient and annealing temperature using 350 ºC and 200 ºC was also analysed in order to get more insight into resistive switching mechanism. The Ag/IGZOnp/Ti memristor structure annealed at 200 ºC exhibits the best results with a large yield. The device shows a self-compliant bipolar resistive switching behavior. The switching event is achieved by the set/reset voltages of -1 V/+1 V respectively with an operating window of 10, and it can be programmed for more than 100 endurance cycles. The retention time of on and off-states is up to 104 s. The obtained results suggest that Ag/IGZOnp/Ti structure could be applied in system on a panel (SoP) as a viable device.
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