Solution-based IGZO nanoparticles memristor

This work aims to characterize Indium-Gallium-Zinc-Oxide nanoparticles (IGZOnp) as a resistive switching matrix in metal-insulator-metal (MIM) structures for memristor application. IGZOnp was produced by low cost solution-based process and deposited by spin-coating technique. Several top and bottom...

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Detalhes bibliográficos
Autor principal: Rosa, José Manuel Atalaia (author)
Formato: masterThesis
Idioma:eng
Publicado em: 2017
Assuntos:
IGZO nanoparticles
Solution-base
Bipolar resistive switching
Valence Change Memory
Self-compliant
Domínio/Área Científica::Engenharia e Tecnologia::Engenharia dos Materiais
Texto completo:http://hdl.handle.net/10362/21755
País:Portugal
Oai:oai:run.unl.pt:10362/21755

Texto Completo

http://hdl.handle.net/10362/21755

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