A new physics based SPICE model for NPT IGBT
A physics based, Non-Punch-Through, Insulated Gate Bipolar Transistor (NPT-IGBT) model is presented, as well as its porting into available circuit simulator SPICE. The developed model results in a system of ODEs, from which time/space hole/electron distribution is obtained, and is based on solution...
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Other Authors: | , |
Format: | book |
Language: | eng |
Published: |
2003
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Subjects: | |
Online Access: | https://hdl.handle.net/10216/167 |
Country: | Portugal |
Oai: | oai:repositorio-aberto.up.pt:10216/167 |