A new physics based SPICE model for NPT IGBT
A physics based, Non-Punch-Through, Insulated Gate Bipolar Transistor (NPT-IGBT) model is presented, as well as its porting into available circuit simulator SPICE. The developed model results in a system of ODEs, from which time/space hole/electron distribution is obtained, and is based on solution...
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| Outros Autores: | , |
| Formato: | book |
| Idioma: | eng |
| Publicado em: |
2003
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| Assuntos: | |
| Texto completo: | https://hdl.handle.net/10216/167 |
| País: | Portugal |
| Oai: | oai:repositorio-aberto.up.pt:10216/167 |