DLTS investigation of acceptor states in P3MeT Schottky barrier diodes

Deep Level Transient Spectroscopy (DLTS) has been used to investigate hole traps in the depletion region of Schottky barrier diodes formed from electropolymerised poly(3-methylthiophene). The capacitance transients appear to be composed of a fast and a slow component. Analysis of the slower componen...

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Bibliographic Details
Main Author: Jones, G. W. (author)
Other Authors: Taylor, D. M. (author), Gomes, Henrique L. (author)
Format: article
Language:eng
Published: 2015
Online Access:http://hdl.handle.net/10400.1/6593
Country:Portugal
Oai:oai:sapientia.ualg.pt:10400.1/6593

Internet

http://hdl.handle.net/10400.1/6593

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