DLTS investigation of acceptor states in P3MeT Schottky barrier diodes
Deep Level Transient Spectroscopy (DLTS) has been used to investigate hole traps in the depletion region of Schottky barrier diodes formed from electropolymerised poly(3-methylthiophene). The capacitance transients appear to be composed of a fast and a slow component. Analysis of the slower componen...
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| Outros Autores: | , |
| Formato: | article |
| Idioma: | eng |
| Publicado em: |
2015
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| Texto completo: | http://hdl.handle.net/10400.1/6593 |
| País: | Portugal |
| Oai: | oai:sapientia.ualg.pt:10400.1/6593 |